PRODUCT INNOVATIONS
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New LDMOS RF power transistors with up to 170 W target 2.5 to 2.7 GHz WiMAX applications
Infineon Technologies announced two new LDMOS RF power transistors
targeting wireless infrastructure applications, such as WiMAX, in the
2.5 GHz-to-2.7 GHz frequency band. These products, which provide peak
output power of up to 170 W, extend Infineon’s broad portfolio of
RF power transistors for WiMAX applications, which currently includes
10 W, 45 W and 130 W devices. The high peak power performance of the
new LDMOS RF power transistors will enable designers to simplify their
RF power amplifier designs.
“With this addition to its comprehensive product portfolio, Infineon continues to offer the highest peak power RF power transistors in the market,” said Helmut Volger, Vice President and General Manager for RF Power, Infineon Technologies. “As the wireless infrastructure market adopts WiMAX and other new technologies, such products as Infineon’s LDMOS RF power transistors, with their enhanced features and capabilities, become a crucial element in a designer’s tool kit. The higher peak power enables designers to develop a simpler design, and lowers the overall bill of materials.”
Infineon’s PTFA260851E/F 85W FET features 14 dB gain (typical) and 22 percent efficiency (typical) at 16 W average output power, under WiMAX signal conditions. The PTFA261702E 170W FET features 15 dB gain (typical) and 20 percent efficiency at 32 W average output power, under WiMAX signal conditions.
Infineon’s PTFA261702E is rated at 170W (P-1 dB), the industry’s highest peak output power in the 2.5 GHz-to-2.7 GHz band. The transistor’s architecture provides electrically isolated halves that ease use in Doherty power amplifier applications. The device can also be used in a push-pull configuration for extended bandwidth performance.
Both products are available in lead-free, RoHS-compliant ceramic packages. Operating at 28 V, these transistors provide broadband internal matching, and are capable of handling a 10:1 VSWR (voltage standing wave ratio) at CW (continuous wave) power output and 28 V supply voltage.
“With this addition to its comprehensive product portfolio, Infineon continues to offer the highest peak power RF power transistors in the market,” said Helmut Volger, Vice President and General Manager for RF Power, Infineon Technologies. “As the wireless infrastructure market adopts WiMAX and other new technologies, such products as Infineon’s LDMOS RF power transistors, with their enhanced features and capabilities, become a crucial element in a designer’s tool kit. The higher peak power enables designers to develop a simpler design, and lowers the overall bill of materials.”
Infineon’s PTFA260851E/F 85W FET features 14 dB gain (typical) and 22 percent efficiency (typical) at 16 W average output power, under WiMAX signal conditions. The PTFA261702E 170W FET features 15 dB gain (typical) and 20 percent efficiency at 32 W average output power, under WiMAX signal conditions.
Infineon’s PTFA261702E is rated at 170W (P-1 dB), the industry’s highest peak output power in the 2.5 GHz-to-2.7 GHz band. The transistor’s architecture provides electrically isolated halves that ease use in Doherty power amplifier applications. The device can also be used in a push-pull configuration for extended bandwidth performance.
Both products are available in lead-free, RoHS-compliant ceramic packages. Operating at 28 V, these transistors provide broadband internal matching, and are capable of handling a 10:1 VSWR (voltage standing wave ratio) at CW (continuous wave) power output and 28 V supply voltage.
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